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The thermal conductivity of silicon carbide is almost comparable to that of commonly used graphite tubes and is far higher than that of other materials. Its thermal conductivity is twice that of tantalum, five times that of stainless steel, ten times that of Teflon (polytetrafluoroethylene), 15 times that of enamel, and 50 times that of polytetrafluoroethylene. This excellent thermal conductivity allows SiC heat exchangers to achieve higher heat transfer efficiency with a significantly smaller heat transfer area.

Due to its excellent thermal conductivity and superior mechanical properties, pressureless sintered silicon carbide is a preferred material for heat exchanger tubes. Its relative density reaches over 98%, and it is a sealed body without any impregnant. Its hardness is 50% higher than that of tungsten carbide (hard alloy), thus exhibiting superior wear resistance and complete impermeability even under extreme temperatures and pressures, allowing media to pass through at high speeds. The high hardness and high density of silicon carbide also mean that it will not contaminate the medium in high-purity applications.

Physical Properties of Pressureless Sintered Silicon Carbide Ceramic Products

Physical Properties		UNIT	Pressureless Sintered Silicon Carbide
Composition: SiC		vol%	≥98
Density 20°℃		g/cm³	≥3.10
Open Porosity		Vol%	＜3.0
Hardness	Rockwell Hardness 45N	R45N	93
	Vickers Hardness HVI	kg/mm²	2350
Flexural Strength 20℃		MPa	320–400
Flexural Strength1300℃		MPa	300–400
Cofficient of Themal Expansion		10⁻⁶K⁻¹	4
Themal Conductivity 20℃		Wm⁻¹K⁻¹	116
Thermal Conducivity 1200℃		Wm⁻¹K⁻¹	35
Modulus of Elasticity @ RT		GPa	410
Thermal shock resistance		℃	＞350
Mar. Service Temp (air)		℃	approx.1650