What are the properties of silicon carbide

2022-06-08

Silicon carbide is the only binary compound in Si and C binary system. The atomic ratio is 1:1. The following mainly explains the characteristics of silicon carbide.

1. Good stability

Boiling in HCl, H2SO4 and HF is also resistant to erosion. SiC does not react with silicic acid at high temperature, so it has good resistance to acid slag. SiC with lime at 525 degrees began to react, near 1000 degrees reaction is significant, and copper oxide reaction at 800 degrees has been strongly carried out. It reacts with iron oxide at 1000 to 1200 degrees, and by 1300 degrees it has obviously cracked. Reaction with manganese oxide from 1360 degrees to crack reaction. SiC in chlorine, from 600 degrees with the reaction, to 1200 degrees can make its decomposition into SiCl4 and CCl4. Molten alkali can decompose SiC under heat.

2, good oxidation resistance

Silicon carbide at room temperature, oxidation resistance is very good, in the synthesis of SiC residual Si, C and iron oxide on the degree of oxidation of SiC. Pure SiC can be used safely at a temperature of up to 1500 degrees in the ordinary oxidation atmosphere, while silicon carbide containing some impurities will be oxidized at 1220 degrees.

3, thermal shock resistance is good

Because silicon carbide does not melt and decompose vapor temperature is very high, and has high thermal conductivity and low thermal expansion, so as to have good thermal shock resistance.

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Silicon carbide, power semiconductor industry development of new opportunities

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2021-09-15